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DISCRETE SEMICONDUCTORS
DATA SHEET
BLF242 HF/VHF power MOS transistor
Product specification September 1992
Philips Semiconductors
Product specification
HF/VHF power MOS transistor
FEATURES * High power gain * Low noise * Easy power control * Good thermal stability * Withstands full load mismatch * Gold metallization ensures excellent reliability.
2 3
MSB057
BLF242
PIN CONFIGURATION
halfpage
1
4
d g
MBB072
s
DESCRIPTION Silicon N-channel enhancement mode vertical D-MOS transistor designed for professional transmitter applications in the HF/VHF frequency range. The transistor is encapsulated in a 4-lead, SOT123 flange envelope, with a ceramic cap. All leads are isolated from the flange. PINNING - SOT123 PIN 1 2 3 4 drain source gate source DESCRIPTION Fig.1 Simplified outline and symbol.
CAUTION The device is supplied in an antistatic package. The gate-source input must be protected against static charge during transport and handling. WARNING Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste.
QUICK REFERENCE DATA RF performance at Th = 25 C in a common source test circuit. MODE OF OPERATION CW, class-B f (MHz) 175 VDS (V) 28 PL (W) 5 Gp (dB) > 13 typ. 16 D (%) > 50 typ. 60
September 1992
2
Philips Semiconductors
Product specification
HF/VHF power MOS transistor
LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). SYMBOL VDS VGS ID Ptot Tstg Tj PARAMETER drain-source voltage gate-source voltage DC drain current total power dissipation storage temperature junction temperature up to Tmb = 25 C CONDITIONS - - - - -65 - MIN.
BLF242
MAX. 65 20 1 16 150 200
UNIT V V A W C C
THERMAL RESISTANCE SYMBOL Rth j-mb Rth mb-h PARAMETER thermal resistance from junction to mounting base thermal resistance from mounting base to heatsink CONDITIONS Tmb = 25 C; Ptot = 16 W Tmb = 25 C; Ptot = 16 W THERMAL RESISTANCE 11 K/W 0.3 K/W
handbook, halfpage
10
MRA918
MPG141
handbook, halfpage
20
ID (A)
Ptot (W)
(2)
1
(1) (2) (1)
10 10-1
10-2 1
10
VDS (V)
102
0 0 50 100 Th (C) 150
(1) Current is this area may be limited by RDS(on). (2) Tmb = 25 C.
(1) Continuous operation. (2) Short-time operation during mismatch.
Fig.2 DC SOAR.
Fig.3 Power/temperature derating curves.
September 1992
3
Philips Semiconductors
Product specification
HF/VHF power MOS transistor
CHARACTERISTICS Tj = 25 C unless otherwise specified. SYMBOL V(BR)DSS IDSS IGSS VGS(th) gfs RDS(on) IDSX Cis Cos Crs PARAMETER drain-source breakdown voltage drain-source leakage current gate-source leakage current gate-source threshold voltage forward transconductance drain-source on-state resistance on-state drain current input capacitance output capacitance feedback capacitance CONDITIONS VGS = 0; ID = 0.1 mA VGS = 0; VDS = 28 V VGS = 20 V; VDS = 0 ID = 3 mA; VDS = 10 V ID = 0.3 A; VDS = 10 V ID = 0.3 A; VGS = 1 V VGS = 10 V; VGS = 10 V VGS = 0; VDS = 28 V; f = 1 MHz VGS = 0; VDS = 28 V; f = 1 MHz VGS = 0; VDS = 28 V; f = 1 MHz MIN. 65 - - 2 0.16 - - - - - TYP. - - - - 0.24 3.3 1.2 13 9.4 1.7
BLF242
MAX. UNIT - 10 1 4.5 - 5 - - - - V A A V S A pF pF pF
handbook, halfpage
4
MBB777
handbook, halfpage
1.5
MGP142
T.C. (mV/K) 2
ID (A) 1
0
0.5 -2
-4 0 100 200 ID (mA) 300
0 0 5 10 VGS (V) 15
VDS = 10 V.
VDS = 10 V; Tj = 25 C.
Fig.4
Temperature coefficient of gate-source voltage as a function of drain current, typical values.
Fig.5
Drain current as a function of gate-source voltage, typical values.
September 1992
4
Philips Semiconductors
Product specification
HF/VHF power MOS transistor
BLF242
handbook, halfpage
6
MBB778
handbook, halfpage
30
MBB776
RDS (on) ()
C (pF)
4
20 Cis Cos
2
10
0 0 50 100 Tj (oC) 150
0 0 10 20 VDS (V) 30
ID = 0.3 A; VGS = 10 V.
VGS = 0; f = 1 MHz.
Fig.6
Drain-source on-state resistance as a function of junction temperature, typical values.
Fig.7
Input and output capacitance as functions of drain-source voltage, typical values.
handbook, halfpage
6
MBB775
Crs (pF)
4
2
0 0 10 20 VDS (V) 30
VGS = 0; f = 1 MHz.
Fig.8
Feedback capacitance as a function of drain-source voltage, typical values.
September 1992
5
Philips Semiconductors
Product specification
HF/VHF power MOS transistor
APPLICATION INFORMATION FOR CLASS-B OPERATION Th = 25 C; Rth mb-h = 0.3 K/W; unless otherwise specified. RF performance in CW operation in a common source class-B test circuit. MODE OF OPERATION CW, class-B f (MHz) 175 VDS (V) 28 IDQ (mA) 10 PL (W) 5 GP (dB) > 13 typ. 16 D (%) > 50 typ. 60
BLF242
RGS () 47
Ruggedness in class-B operation The BLF242 is capable of withstanding a load mismatch corresponding to VSWR = 50 through all phases under the following conditions: VDS = 28 V; f =175 MHz at rated output power. Noise figure (see Fig.11) VDS = 28 V; ID = 0.2 A; f = 175 MHz; RGS = 47 ; Th = 25 C. Input and output power matched for PL = 5 W; F = typ. 5.5 dB.
MGP143
MGP144
handbook, halfpage
20
100 d (%)
handbook, halfpage
10
Gp (dB)
Gp d
PL (W)
10
50
5
0 0 5 PL (W) 10
0
0 0 0.5 PIN (W) 1
Class-B operation; VDS = 28 V; IDQ = 10 mA; RGS = 47 ; f = 175 MHz.
Class-B operation; VDS = 28 V; IDQ = 10 mA; RGS = 47 ; f = 175 MHz.
Fig.9
Power gain and efficiency as functions of load power, typical values.
Fig.10 Load power as a function of input power, typical values.
September 1992
6
Philips Semiconductors
Product specification
HF/VHF power MOS transistor
BLF242
handbook, full pagewidth
D.U.T. C1 L1 R1 C3 L2
L3
L5
C6
input 50 C2
output 50 C7
L4 L6 +VD C8 C9
C3 +VG
R2 C5
MGP145
f = 175 MHz.
Fig.11 Test circuit for class-B operation.
List of components (class-B test circuit) COMPONENT C1, C2, C7 C3 C4, C8 C6 C9 L1 DESCRIPTION film dielectric trimmer multilayer ceramic chip capacitor (note 1) ceramic chip capacitor film dielectric trimmer electrolytic capacitor VALUE 4 to 40 pF 100 pF 100 nF 5 to 60 pF 2.2 F, 40 V length 5.4 mm int. dia. 3 mm leads 2 x 5 mm 10 x 6 mm length 15.5 mm int. dia. 8 mm leads 2 x 5 mm length 9.1 mm int. dia. 5 mm leads 2 x 5 mm 4312 020 36640 47 10 2222 852 47104 2222 809 08003 DIMENSIONS CATALOGUE NO. 2222 809 08002
5 turns enamelled 0.7 mm copper wire 53 nH
L2, L3 L4
stripline (note 2) 11 turns enamelled 1 mm copper wire
30 500 nH
L5
5 turns enamelled 1 mm copper wire
79 nH
L6 R1 R2 Notes
grade 3B Ferroxcube RF choke 0.5 W metal film resistor 0.5 W metal film resistor
1. American Technical Ceramics (ATC) capacitor, type 100B or other capacitor of the same quality. 2. The striplines are on a double copper-clad printed circuit board, with epoxy fibre-glass dielectric (r = 4.5), thickness 116 inch.
September 1992
7
Philips Semiconductors
Product specification
HF/VHF power MOS transistor
BLF242
handbook, full pagewidth
150
strap strap 70
rivet
L6 C5 R2 +VG C1 C2 R1 L1 L2 L3 C3 C4 C8 L4 L5 C6 C7 C9 +VD
MGP146
The circuit and components are situated on one side of the epoxy fibre-glass board, the other side being fully metallized to serve as earth. Earth connections are made by fixing screws, copper straps and hollow rivets at the edges of the board and under the source. Dimensions in mm.
Fig.12 Component layout for 175 MHz class-B test circuit.
September 1992
8
Philips Semiconductors
Product specification
HF/VHF power MOS transistor
BLF242
handbook, halfpage
50
MGP150
MGP149
handbook, halfpage
100 ZL ()
Zi () 30
ri
RL
10
50 XL
-10 xi -30 0 100 f (MHz) 200
0 0 100 f (MHz) 200
Class-B operation; VDS = 28 V; PL = 30 W; RGS = 47 ; Th = 25 C.
Class-B operation; VDS = 28 V; PL = 30 W; RGS = 47 ; Th = 25 C.
Fig.13 Input impedance as a function of frequency (series components), typical values.
Fig.14 Load impedance as a function of frequency (series components), typical values.
MGP148
handbook, halfpage
20
Gp (dB)
10
0 0 100 f (MHz) 200
Class-B operation; VDS = 28 V; PL = 30 W; RGS = 47 ; Th = 25 C.
Fig.15 Power gain as a function of frequency, typical values.
September 1992
9
Philips Semiconductors
Product specification
HF/VHF power MOS transistor
PACKAGE OUTLINE Flanged ceramic package; 2 mounting holes; 4 leads
BLF242
SOT123A
D
A F q U1 C B
w2 M C H L b c
4
3
A
p
U2
U3
1 2
H
w1 M A B
Q
0
5 scale
10 mm
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT mm inches A 7.47 6.37 0.294 0.251 b 5.82 5.56 c 0.18 0.10 D 9.73 9.47 D1 9.63 9.42 F 2.72 2.31 H 20.71 19.93 L 5.61 5.16 p 3.33 3.04 Q 4.63 4.11 q 18.42 U1 25.15 24.38 0.99 0.96 U2 6.61 6.09 0.26 0.24 U3 9.78 9.39 0.385 0.370 w1 0.51 0.02 w2 1.02 45 0.04
0.229 0.007 0.219 0.004
0.383 0.397 0.107 0.815 0.373 0.371 0.091 0.785
0.221 0.131 0.203 0.120
0.182 0.725 0.162
OUTLINE VERSION SOT123A
REFERENCES IEC JEDEC EIAJ
EUROPEAN PROJECTION
ISSUE DATE 97-06-28
September 1992
10
Philips Semiconductors
Product specification
HF/VHF power MOS transistor
DEFINITIONS Data Sheet Status Objective specification Preliminary specification Product specification Limiting values
BLF242
This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications.
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
September 1992
11

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